absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave,50 to 60hz 600 v i t(av) average on-state current half sine wave : t c = 83 c 0.5 a i t(rms) r.m.s on-state current all conduction angle 1.0 a i tsm surge on-state current 1/2 cycle, 60hz, sine wave non-repetitive , t = 8.3ms 10 a i 2 t i 2 t for fusing t = 8.3ms 0.415 a 2 s p gm forward peak gate power dissipation t a = 25 c, pulse width 1.0 ? 2w p g(av) forward average gate power dissipation t a = 25 c, t = 8.3ms 0.1 w i fgm forward peak gate current t a = 25 c, pulse width 1.0 ? 1a v rgm reverse peak gate voltage t a = 25 c, pulse width 1.0 ? 5.0 v t j operating junction temperature - 40 ~ 1 10 c t stg storage temperature - 40 ~ 150 c cr100- april , 2010. rev.1 1 /6 features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 1.0 a ) low on-state voltage (1. 3 v(typ.)) general description sensitive-gate triggering thy ristor is suit able for the a pplication where g ate cu rrent lim ited such as small motor control, gate driver for large thyristor, sensing and detecting circuits. 3 . anode 2 .gate 1.cathode symbol i t(rms) = 1.0a i tsm = 10a bv drm = 600v sensitive gate silicon controlled rectifiers to-92 copyright @ apollo electron co., ltd. all rights reserved. 1 3 2 this device may substitute for mCR100-6, mcr100-8.
electrical characteristics ( t j = 25 c unless otherwise noted ) symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v ak = v drm or v rrm ; r gk = 1000 t c = 25 c t c = 1 10c 10 100 ? v tm peak on-state voltage (1) ( i tm = 1 a, peak ) 1. 3 1.7 v i gt gate trigger current (2) v ak = 12 v, r l =100 -- 200 ? v gt gate trigger voltage (2) v d =12 v, r l =100 -- -- 0.8 v v gd non-trigger gate voltage (1) v ak = 12 v, r l =100 t j = 125 c 0.2 v dv/dt critical rate of rise off-state voltage 10 -- -- v/ ? di/dt critical rate of rise o n -state voltage i tm = 2a ; i g = 10ma 50 a/ ? i h holding current v ak = 12 v, gate open initiating curent = 20ma --- 0.8 10 ma r th(j-c) thermal impedance junction to case 60 c/w r th(j-a) thermal impedance junction to ambient 150 c/w 2/6 cr100-
-50 0 50 100 150 0.1 1 10 i gt (t o c) i gt (25 o c) junction temperature[ o c] 10 -2 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 r (j-c) transient thermal impedance [ o c/w] time (sec) 0.5 1.0 1.5 2.0 2.5 10 -1 10 0 10 1 125 o c 25 o c on-state current [a] on-state voltage [v] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 20 40 60 80 100 120 140 = 180 o max. allowable case temperature [ o c] average on-state current [a] 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 i gm (1a) v gd (0.2v) p g(av) (0.1w) p gm (2w) v gm (5v) 25 o c gate voltage [v] gate current [ma] : conduction angl e 360 2 -50 0 50 100 150 0.1 1 10 v gt (t c) v gt (25 o c) junction temperature[ o c] fig 1. gate characteristics fig 2. maximum case temperature fig 3. typical forward voltage fig 4. thermal response fig 6. typical gate trigger current vs. junction temperature fig 5. typical gate trigger voltage vs. CR100-6 3/6
4/6 CR100-6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 = 180 o = 120 o = 90 o = 60 o = 30 o max. average power dissipation [w] average on-state current [a] -50 0 50 100 150 0.1 1 10 i h (t o c) i h (25 o c) junction temperature[ o c] fig 8. power dissipation fig 7. typical holding current
dim. mm inch min. typ. max. min. typ. max. a 4.2 0.165 b 3.7 0.146 c 4.43 4.83 0.174 0.190 d 14.07 14.87 0.554 0.585 e 0.4 0.016 f 4.43 4.83 0.174 0.190 g 0.45 0.017 h2.54 0.100 i2.54 0.100 j 0.33 0.48 0.013 0.019 5/6 CR100-6 to-92 package dimension 1. cathode 2. gate 3. anode a b c g e f d h j 1 2 3 i
dim. mm inch min. typ. max. min. typ. max. a 4.2 0.165 b 3.7 0.146 c 4.43 4.83 0.174 0.190 d 14.07 14.87 0.554 0.585 e 0.4 0.016 f 4.43 4.83 0.174 0.190 g 0.45 0.017 h2 . 5 4 0 . 1 0 0 i2 . 5 4 0 . 1 0 0 j 0.33 0.48 0.013 0.019 k 4.5 5.5 0.177 0.216 l 7.8 8.2 0.295 0.323 m 1.8 2.2 0.070 0.086 n 1.3 1.7 0.051 0.067 to-92 package dimension, forming 1. cathode 2. gate 3. anode 6/6 CR100-6 a e g h c b d f i j 1 2 3 k l m n
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